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APT12057B2FLL APT12057LFLL
POWER MOS 7
(R)
1200V 22A 0.570
B2FLL
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
T-MAXTM
TO-264
LFLL
* Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT12057B2FLL_LFLL UNIT Volts Amps
1200 22 88 30 40 690 5.52 -55 to 150 300 22 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1200 0.570 250 1000 100 3 5
(VGS = 10V, 11A)
Ohms A nA Volts
7-2004 050-7083 Rev C
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT12057 B2FLL_LFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 22A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 22A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 800V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 800V VGS = 15V ID = 22A, RG = 5 ID = 22A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
5155 770 130 185 24 120 11 20 36 21 865 420 1390 530
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
22 88 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -22A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -22A, di/dt = 100A/s) Reverse Recovery Charge (IS = -22A, di/dt = 100A/s) Peak Recovery Current (IS = -22A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
320 650 18 7 28 220
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.20
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 12.39mH, RG = 25, Peak IL = 22A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -22A di/dt 700A/s VR 1200 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
0.9
0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
7-2004
050-7083 Rev C
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
50 45 40 35 30 25 20 15 10 5 0
APT12057 B2FLL_LFLL
VGS =15,10 & 8V 7V 6.5V
0.0272
0.0090F
Power (watts)
0.0565
0.0202F
6V
0.0860 Case temperature. (C)
0.293F
5.5V 5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V NORMALIZED TO = 10V @ I = 11A
D
80
ID, DRAIN CURRENT (AMPERES)
70 60 50 40 30 20 10 0
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
GS
1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80 VGS=10V
TJ = +125C TJ = +25C
TJ = -55C
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
5
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
ID, DRAIN CURRENT (AMPERES)
20
15
10
5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
0
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6
= 0.5 I V
GS
D
[Cont.]
= 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50 -25
050-7083 Rev C
7-2004
88
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
C, CAPACITANCE (pF)
APT12057 B2FLL_LFLL
ID, DRAIN CURRENT (AMPERES)
5,000
Ciss
10 5
100S
1,000 500 Coss
1
TC =+25C TJ =+150C SINGLE PULSE
1mS Crss
1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
10mS
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 22A
200 100
12
VDS=100V VDS=250V
TJ =+150C TJ =+25C 10
8
VDS=400V
4
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 160 140 120
td(on) and td(off) (ns)
R = 5
0
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 70
V
DD G
1
td(off) 60 50
V
DD G
= 800V
R
= 5
T = 125C
J
L = 100H
tf
tr and tf (ns)
100 80 60 40 20 0 10
= 800V
T = 125C
J
40 30 20 tr 10
L = 100H
td(on) 20
30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
3500 3000
SWITCHING ENERGY (J)
V
= 800V
30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4000
V I
DD
0 10
20
= 800V
R
= 5
T = 125C
J
3500
SWITCHING ENERGY (J)
D J
= 22A
T = 125C
L = 100H
Eoff
2500 2000 1500 1000 500
E ON includes diode reverse recovery.
3000 2500 2000 1500 1000 500 0
L = 100H EON includes diode reverse recovery.
Eon
Eon
7-2004
Eoff
050-7083 Rev C
30 40 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
20
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
90%
APT12057 B2FLL_LFLL
Gate Voltage 10% TJ125C
td(off) tf
Gate Voltage
TJ125C
td(on) tr
Drain Current 90% 5% 10% Switching Energy Drain Voltage
Drain Voltage 90% 10% 0
5%
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF120
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7083 Rev C
2.21 (.087) 2.59 (.102)
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
7-2004
1.01 (.040) 1.40 (.055)
Gate Drain Source
Gate Drain Source

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